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 UNISONIC TECHNOLOGIES CO., LTD 81CXXX/81NXXX
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
DESCRIPTION
The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption. A delay circuit is built-in to each detector, therefore, peripherals are unnecessary and high density mounting is possible. Detect voltage is extremely accurate with minimal temperature drift. Both CMOS and N-channel open drain output configurations are available.
3
CMOS IC
1 1
2
SOT-23
SOT-89
1
FEATURES
*Highly Accurate : Detect voltage 2% *Built-In Delay time : 1ms ~ 50ms, 50ms ~ 200ms, 200ms ~ 400ms, *Detect Voltage Temperature Characteristics: TYP 100ppm/ *Wide Operating Voltage Range : 0.7V ~ 10.0V *Low Current Consumption : TYP 1.0 A (VIN=2.0V)
TO-92
*Pb-free plating product number: 81CXXXL/81NXXXL
ORDERING INFORMATION CMOS:
Order Number Normal Lead Free Plating 81Cxx- -AB3-E-R 81CxxL- -AB3-E-R 81Cxx- -AE3-3-R 81CxxL- -AE3-3-R 81Cxx- -AE3-5-R 81CxxL- -AE3-5-R 81Cxx- -T92-D-B 81CxxL- -T92-D-B 81Cxx- -T92-E-B 81CxxL- -T92-E-B 81Cxx- -T92-D-K 81CxxL- -T92-D-K 81Cxx- -T92-E-K 81CxxL- -T92-E-K N-Channel: Order Number :Delay Time Normal Lead Free Plating Duration Code 81Nxx- -AB3-E-R 81NxxL- -AB3-E-R 81Nxx- -AE3-3-R 81NxxL- -AE3-3-R 81Nxx- -AE3-5-R 81NxxL- -AE3-5-R H 1 ~ 50 ms J 81Nxx- -T92-D-B 81NxxL- -T92-D-B 50 ~ 200 ms 81Nxx- -T92-E-B 81NxxL- -T92-E-B 200 ~ 400 ms K 81Nxx- -T92-D-K 81NxxL- -T92-D-K 81Nxx- -T92-E-K 81NxxL- -T92-E-K Note: 1. Pin assignment: I:Vin O:Vout G:Vss 2.xx: Output Voltage, refer to Marking Information. Package SOT-89 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 Pin Assign. 1 2 3 O I G OG I GO I I GO O I G I GO O I G Packing Tape Reel Tape Reel Tape Reel Tape Box Tape Box Bulk Bulk :Delay Time Duration Code Package SOT-89 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 Pin Assign. 1 2 3 O I G OG I GO I I GO O I G I GO O I G Packing Tape Reel Tape Reel Tape Reel Tape Box Tape Box Bulk Bulk
1 ~ 50 ms 50 ~ 200 ms 200 ~ 400 ms
P Q R
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81CXXX/81NXXX
ORDERING INFORMATION(Cont.)
8 1C x x L - 1 - A B 3 - x -R
(1)Packing Type (2)Pin Code (3)Package Type (4)Delay Time (5)Lead Plating (6)Output Voltage Code (7)Output Configuration
CMOS IC
(1) R: Tape Reel, B: Tape Box, K: Bulk (2) refer to Pin Assignment (3) AB3: SOT-89, AE3: SOT-23, T92: TO-92 (4) 1 : refer to Delay Time (5)L: Lead Free Plating, Blank: Pb/Sn (6) xx: refer to Marking Information (7) C: CMOS, N: N-Cannel
MARKING INFORMATION
PACKAGE 10:1.0V 11:1.1V 12:1.2V 13:1.3V 14:1.4V 15:1.5V 16:1.6V 17:1.7V 18:1.8V 19:1.9V 20:2.0V 21:2.1V 22:2.2V 23:2.3V 24:2.4V 25:2.5V VOLTAGE CODE 26:2.6V 27:2.7V 28:2.8V 29:2.9V 30:3.0V 31:3.1V 32:3.2V 33:3.3V 34:3.4V 35:3.5V 36:3.6V 37:3.7V 38:3.8V 39:3.9V MARKING
SOT-89
TO-92
40:4.0V 41:4.1V 42:4.2V 43:4.3V 44:4.4V 45:4.5V 46:4.6V 47:4.7V 48:4.8V 49:4.9V 50:5.0V
Date Code C:CMOS N:N-Channel
81XXXX
1 2 3
Lead Plating Voltage Code
C:CMOS N:N-Channel
UTC 81XXXX
Lead Plating Voltage Code Date Code
Pin Code 1 2 3
PACKAGE INTEGER* CODE DECIMAL** CODE 1. 1 .0 A 2. 2 .1 B 3. 3 .2 C 4. 4 .3 D 5. 5 .4 E SOT-23 Voltage Code 6. 6 .5 F .6 G .7 H .8 J .9 K * Represents the integer of the Detect Voltage ** Represents the decimal number of the Detect Voltage
MARKING
3 Month Lead Plating Pin Code 2 1
EXAMPLE:
81C27P 3 2HA L 2 1
Month (January ) L:Pb-free Pin Code Voltage Code
81N27H 3 2HE 2 L 1
Month (May) L:Pb-free Pin Code
Voltage Code
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QW-R502-039,I
81CXXX/81NXXX
BLOCK DIAGRAM
VIN
CMOS IC
Delay Circuit VREF
VOUT
Vss CMOS Output
VIN
VOUT Delay Circuit VREF
Vss N-channel Open Drain Output
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QW-R502-039,I
81CXXX/81NXXX
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
PARAMETER Input Voltage Output Current SYMBOL VIN IOUT
CMOS IC
RATINGS UNIT 12 V 50 mA CMOS VSS-0.3 ~ VIN+0.3 Output Voltage VOUT V N-Ch open drain VSS-0.3 ~ 9 SOT-23 150 Power Dissipation PD mW SOT-89 500 TO-92 300 Operating Temperature TOPR -30 ~ +80 Storage Temperature TSTG -40 ~ +125 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction-Case SOT-23 SOT-89 TO-92 SYMBOL
JC
RATINGS 200 100 45
UNIT /W
ELECTRICAL CHARACTERISTICS (Ta=25 )
Detection voltage (1.0V ~ 1.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRxVDF tDLY * 5 VIN changes from 0.6V ~ 10V 50 VDF=1.6V ~ 6.0V VIN=1.5V VIN=5.0 N-ch VDS=0.5V, VIN =1.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7 MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 0.9 2.6 A 2.0 4.2 A 2.2 -15.4 100 200 mA mA ppm/ ms TYP
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QW-R502-039,I
81CXXX/81NXXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRxVDF tDLY * 5 VIN changes from 0.6V ~ 10V TEST CONDITIONS 50 VDF=1.6V ~ 6.0V VIN=2.0V VIN=5.0V N-ch VDS=0.5V, VIN =2.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7 TYP
CMOS IC
MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.0 3.0 A 2.0 4.2 A 7.9 -15.4 100 200 mA mA ppm/ ms
Detection voltage (3.0V ~ 3.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRxVDF tDLY * 5
VDF=1.6V ~ 6.0V VIN =3.0V VIN =5.0V N-ch VDS=0.5V, VIN =3.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output)
MIN VDF (T) X0.98 VDF X0.02 0.7
MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.3 3.4 A 2.0 4.2 A 10.1 -15.4 100 mA mA ppm/ 200 ms
TYP
VIN changes from 0.6V ~ 10V
50
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QW-R502-039,I
81CXXX/81NXXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) Detection voltage (5.0V) PARAMETER Detect Voltage Hysteresis Range Operating Voltage Supply Current Output Current VDF TOPRxVDF tDLY * 5 VIN changes from 0.6V ~ 10V TEST CONDITIONS 50 VDF=1.6V ~ 6.0V VIN=4.0V VIN=5.0V N-ch VDS=0.5V, VIN=4.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7
CMOS IC
MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.5 3.8 A 2.0 4.2 A 11.5 -15.4 100 200 mA mA ppm/ ms
TYP
SYMBOL CIRCUIT VDF VHYS VIN ISS IOUT 1 1 1 2 3 4
VDF=1.6V ~ 6.0V VIN=5.0V N-ch VDS=0.5V, VIN =5.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output)
MIN VDF (T) X0.98 VDF X0.02 0.7
MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 2.0 4.2 A 13.0 mA -15.4 100 200 mA ppm/ ms
TYP
VDF VDF Temperature Characteristics TOPRxVDF VIN changes from Transient Delay Time 50 5 tDLY * (VDR VOUT inversion) 0.6V ~ 10V VDF (T): established detect voltage value Release Voltage: VDR = VDF + VHYS * Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 A greater than it is after that period (completion of release operation) because of delay circuit through current.
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QW-R502-039,I
81CXXX/81NXXX
TEST CIRCUITS
1-1 1-2
100k
CMOS IC
VIN VIN + V
VOUT VSS VIN V + V
VIN
VOUT VSS V
Cmos Output
N-channel Open Drain Output
2
A VIN + VIN VOUT VSS
3
VIN VIN + VOUT Vss A + VDS
4
+ VDS VIN VIN + VOUT Vss A -
5-1
VIN
VIN
VOUT Vss Measurement waveform
Cmos Output
5-2
100k
VIN VIN
VOUT Vss Measurement waveform
N-channel Open Drain Output
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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS
(1) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME
81C30Q
200 400
CMOS IC
81C30R
320 150
tDLY (msec)
tDLY (msec)
100 50
240
160
-30
-10
10
30
50
70
80 -30
-10
10
30
50
70
Ambient Temp., Ta ( 81C30P
50
)
Ambient Temp., Ta (
)
40
tDLY (msec)
30 20
10 0 -30
-10
10
30
50
70
Ambient Temp., Ta (
)
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(2) P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
81C27Q 20 18
Output Current, IOUT (mA)
CMOS IC
81C33Q 20 Ta=25 VDS=2.1V 1.5V 1.0V 0.5V
Ta=25 VDS=2.1V
Output Current, IOUT (mA)
18 16 14 12 10 8 6 4 2
16 14 12 10 8 6 4 2 0 0.0 2.0 4.0 6.0
1.5V 1.0V 0.5V
8.0
10.0
0 0.0
2.0
4.0
6.0
8.0
10.0
Input Voltage, VIN (V)
81C44Q Ta=25 VDS=2.1V 1.5V 1.0V 0.5V
Input Voltage, VIN (V)
20 18
Output Current, IOUT (mA)
16 14 12 10 8 6 4 2 0 0.0 2.0 4.0 6.0
8.0
10.0
Input Voltage, VIN (V)
(2)
TRANSIENT DELAY TIME vs. INPUT VOLTAGE
81C33Q 230 200 170 Ta=25
tD LY (msec)
140 110 80 50 0.0
2.0
4.0
6.0
8.0
10.0
Input Voltage, VIN (V)
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(3) SUPPLY CURRENT vs. INPUT VOLTAGE
CMOS IC
4.0
81N16
4.0
A)
81N25
A)
Supply Current, Iss (
Supply Current, Is s (
3.0
3.0 Ta=80 2.0 25 1.0
2.0
Ta=80 25
1.0
0.0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
Input Voltage, V IN (V) 4.0
A)
Input Voltage, V IN (V) 4.0
A)
81N27
81N28
Supply Current, Is s (
3.0
Supply Current, Iss (
3.0 Ta=80 2.0 25 1.0
2.0
Ta=80 25
1.0
0.0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
Input Voltage, V IN (V) 4.0
A)
Input Voltage, V IN (V) 4.0
A)
81N29
81N30
Supply Current, Iss (
3.0 Ta=80 2.0 25 1.0
Supply Current, Is s (
3.0 Ta=80 2.0 25 1.0
0.0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
Input Voltage, V IN (V)
Input Voltage, V IN (V)
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N33 81N35
CMOS IC
4.0
4.0
Supply Current, Iss ( A)
3.0
Supply Current, Iss ( A)
3.0
2.0
Ta=80 25
2.0
Ta=80
1.0
1.0
25
0.0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
Input Voltage, VIN (V)
Input Voltage, VIN (V)
(4)
OUTPUT VOLTAGE vs. INPUT VOLTAGE
30 81N16 VIN-VOUT:100k Ta=25 / 80 4 81N25 VIN-VOUT:100k Ta=25 / 80
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
2.5 2.0 1.5 1.0 0.5 0.0
3
2
1
0
1 2 Input Voltage, VIN (V) 81N27 VIN-VOUT:100k Ta=25 / 80
3
0
0
1
2 3 Input Voltage, VIN (V) 81N28
4
4
4
VIN-VOUT:100k Ta=25 / 80
Output Voltage, VOUT (V)
Output Voltage, VOUT (V)
3
3
2
2
1
1
0
0
1 2 3 Input Voltage, VIN (V)
4
0
0
2 3 1 Input Voltage, VIN (V)
4
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
CMOS IC
4
Output Voltage, VOUT (V)
81N29 VIN-VOUT:100k Ta=25 / 80
Output Voltage, VOUT (V)
5 4 3 2
81N30 VIN-VOUT:100k Ta=25 / 80
3
2
1
1 0
0
0
3 2 1 Input Voltage, V IN (V) 81N33
4
0
1
3 2 4 Input Voltage, VIN (V) 81N35
5
5
Output Voltage, VOUT (V)
VIN-VOUT:100k Ta=25 / 80
Output Voltage, VOUT (V)
5 4 3 2
VIN-VOUT:100k Ta=25 / 80
4 3 2
1 0
1 0
0
1
2 3 4 Input Voltage, VIN (V)
5
0
1
2 3 4 Input Voltage, VIN (V)
5
(5) N-CHANNEL DRIVRE OUTPUT CURRENT vs. VDS
81N16 Ta=25
Output Current, IOUT (uA)
15
Output Current, IOUT (mA)
1400 1200
81N16 Ta=25 VIN=0.8V
12 VIN=1.5V 9
1000 800 600 400 200 0.7V
6 1.0V 3 0 0.0
0.5
1.0 VDS (V)
1.5
2.0
0
0
0.2
0.4 0.6 VDS (V)
0.8
1.0
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
CMOS IC
30 Ta=25
Output Current, IOUT (mA)
81N25
1200 1000 800 600 400 200 0
81N25 Ta=25 VIN=0.8V
20 15 1.5V 10 5 0
Output Current, IOUT (uA)
25
VIN=2.0V
0.7V
0.0
0.5
1.5 1.0 VDS (V) 81N27
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V) 81N27 Ta=25 VIN=0.8V
30 Ta=25
Output Current, IOUT (mA)
1200 1000 800 600 400 200 0
20 15 10 5 0 0.0
VIN=2.0V
Output Current, IOUT (uA)
25
0.7V
1.0V 0.5 1.0 1.5 VDS (V)
81N28 Ta=25
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
81N28 Ta=25 VIN=0.8V
30
300
Output Current, I OUT (mA)
Output Current, I OUT (uA)
25 20 15 10 5 0 1.0V 0.5 1.5 1.0 VDS (V) 2.0 2.5 VIN=2.0V
250 200 150 100 50 0
0.7V
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29 Ta=25
Output Current, I OUT (mA) Output Current, I OUT (uA)
CMOS IC
30 25 20 15 10 5 0
300 250 200 150 100 50 0
81N29 Ta=25 VIN=0.8V
VIN=2.0V
0.7V
1.0V
0.0
0.5
1.0 1.5 VDS (V) 81N30
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V) 81N30 Ta=25
60 50
350 300
Ta=25
Output Current, I OUT (uA)
Output Current, I OUT (mA)
40 30 20 10 0
250 200 150 100 50 0
V IN=0.8V
VIN=2.0V
0.7V
1.0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
81N33 Ta=25
300
VDS (V)
81N33 Ta=25
60 50 40 30 20 10 0
350
Output Current, I OUT (mA)
Output Current, I OUT (uA)
250 200 150
V IN=3.0V
V IN =0.8V
2.0V 1.0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.7V
100 50 0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
VDS (V)
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QW-R502-039,I
81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N35 Ta=25 VIN=3.0V
Output Current, I OUT (uA)
CMOS IC
60 50 40 30
1400 1200 1000 800
81N35 Ta=25 V IN =0.8V
Output Current, I OUT (mA)
2.5V
0.7V
600 400 200 0
2.0V
20
1.5V
10 0 0.0
0.5 1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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